P01XXXL ? january 1995 sensitive gate scr symbol parameter value unit i t(rms) * rms on-state current (180 conduction angle) ta= 25 c 0.26 a i t(av) * mean on-state current (180 conduction angle) ta= 25 c 0.17 a i tsm non repetitive surge peak on-state current (t j initial = 25 c) tp = 8.3 ms 7.5 a tp = 10 ms 7 i 2 t i 2 t value for fusing tp = 10 ms 0.24 a 2 s di/dt critical rate of rise of on-state current i g =10ma di g /dt = 0.1 a/ m s. 30 a/ m s t stg t j storage and operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s 260 c * : mounted on a ceramic substrate of 8 x 10 x 0.7mm. absolute ratings (limiting values) sot23 (plastic) i t(rms) =0.2a v drm = 100v to 400v low i gt <1 m a max to < 200 m a features symbol parameter voltage unit abcd v drm v rrm repetitive peak off-state voltage t j = 125 cr gk =1k w 100 200 300 400 v the P01XXXL series of scrs uses a high performance planar pnpn technology. these parts are intended for general purpose high volume applications using surface mount technology. description k g a 1/6
p g (av) = 0.02 w p gm =1w(tp=20 m s) i gm = 0.5 a (tp = 20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient * 500 c/w * : mounted on a ceramic substrate of 8 x 10 x 0.7mm. thermal resistances symbol test conditions sensitivity unit 02 09 11 15 i gt v d =12v (dc) r l =140 w tj= 25 c min - - 4 15 m a max 200 1 25 50 v gt v d =12v (dc) r l =140 w tj= 25 c max 0.8 v v gd v d =v drm r l =3.3k w r gk =1k w tj= 125 c min 0.1 v v rgm i rg =10 m a tj= 25 c min 8 v tgd vd =v drm i tm =3xi t(av ) di g /dt = 0.1a/ m si g = 10ma tj= 25 c typ 0.5 m s i h i t = 50ma r gk =1k w tj= 25 c max 5 ma i l i g =1ma r gk =1k w tj= 25 c max 6 ma v tm i tm = 0.4a tp= 380 m s tj= 25 c max 1.3 v i drm i rrm v d =v drm r gk =1k w v r =v rrm tj= 25 c max 1 m a tj= 125 c max 100 m a dv/dt v d =67%v drm r gk =1k w tj= 125 c min 25 25 50 100 v/ m s tq i tm =3xi t(av )v r =35v di/dt=10a/ m s tp=100 m s dv/dt=10v/ m s v d = 67%v drm r gk =1 k w tj= 125 c max 200 m s electrical characteristics ordering information p0102al scr planar current package : l = sot23 voltage sensitivity ? P01XXXL 2/6
0.00 0.04 0.08 0.12 0.16 0.20 0.00 0.05 0.10 0.15 0.20 0.25 p (w) 360 o = 180 o = 120 o =90 o =60 o =30 o dc i (a) t(av) fig.1 : maximum average power dissipation ver- sus average on-state current. 0 102030405060708090100110120130 0.00 0.05 0.10 0.15 0.20 0.25 i (a) t(av) = 180 o tamb ( c) o fig.3 : average on-state current versus tab tem- perature. igt ih 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o tj( c) o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 0 20406080100120140 0.00 0.05 0.10 0.15 0.20 0.25 p (w) rth(j-a) tamb ( c) o fig.2 : correlation between maximum average power dissipation and maximum allowable tem- perature (tamb). 1e-3 1e-2 1e-1 1e +0 1e+1 1e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) tp (s) alumine su bst rate: 10 mm*8 mm*0.5mm fig.4 : relative variation of thermal impedance junction to ambient versus pulse duration. 1 10 100 1,000 0 1 2 3 4 5 6 7 8 tj initial = 25 c o number of cycles i (a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles. ? P01XXXL 3/6
110 0.1 1 10 100 i (a). i 2 t(a 2 s) tsm tj initial = 25 c o i tsm tp(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0.1 1 10 i (a) tm tj initial 25 c o tj max v (v) tm tj max vto =0.95 v rt =0.600 fig.8 : on-state characteristics (maximum values). 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 1.0e+06 0.1 1.0 5.0 ih(rgk) ih(rgk=1k ) tj=25 c o rgk( ) fig.9 : relative variation of holding current versus gate-cathode resistance (typical values). ? P01XXXL 4/6
package mechanical data sot23 (plastic) b b e a g f c d j i h l k m n ref. dimensions millimeters inches min. max. min. max. a 0.93 1.04 0.036 0.041 b 1.20 1.40 0.047 0.055 c 0.15 0.006 d 0.085 0.115 0.003 0.005 e 0.45 0.60 0.018 0.024 f 0.08 0.003 g 0.013 0.10 0.0005 0.004 h 1.90 2.05 0.075 0.081 i 0.95 1.05 0.037 0.041 j 0.95 1.05 0.037 0.041 k 2.10 2.50 0.083 0.098 l 0.45 0.60 0.018 0.024 m 0.37 0.46 0.015 0.018 n 2.80 3.00 0.110 0.118 weight : 0.007 g foot print ? P01XXXL 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-tho mson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. type marking p0102al p2a p0102bl p2b p0102cl p2c p0102dl p2d p0109al p9a p0109bl p9b p0109cl p9c p0109dl p9d p0111al p1a p0111bl p1b p0111cl p1c p0111dl p1d p0115al p5a p0115bl p5b p0115cl p5c p0115dl p5d marking ? P01XXXL 6/6
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